Copper corrosion and etching crystallization after stripping and washing

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The present invention is prepared using hydrogen peroxide, sulfuric acid, ethylenediaminetetramethylenephosphonic acid, acetone oxime, glycolic acid, phosphoric acid, L-malic acid, 1,2,3,4,5-pentahydroxyhexanoic acid, polyvinyl alcohol and pure water.

According to the announcement of the State Intellectual Property Office on June 3, 2024, Xilong Science Co., Ltd. applied for a patent entitled “A copper etching liquid composition that reduces copper corrosion and etching crystallization after stripping and washing”, with the publication number CN202410259017.2 and the application date of March 2024.

The patent abstract shows that the present invention provides a copper etching liquid composition that reduces copper corrosion and copper etching crystallization after stripping and washing, and relates to a copper etching liquid composition. 

During the etching process of copper, the Cu2+ in the copper etching liquid composition of the present invention will react with O2- to generate black CuO. When the solution reaches saturation, a black precipitate will be produced. At the same time, the copper etching liquid will produce crystals after concentration.

The copper etching liquid composition of the present invention has a strong chelating ability, can reduce the Cu2+ content in the solution, and reduce the generation of CuO; ethylenediaminetetramethylenephosphonic acid as a chelating agent can well chelate the Cu2+ content in the solution; acetone oxime can well remove free oxygen. The beryllium copper etching liquid composition of the present invention can reduce crystal accumulation and avoid clogging of pipelines.

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